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Electronic Devices and Circuits - Section 1 (2)

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  • Electronic Devices and Circuits - Section 1
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Electronic Devices and Circuits - Section 1

9. 

A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is

 

A. 31 V
B. 32 V
C. insufficient data
D. none of these

Answer: Option A

Explanation:

76-422-1

RMS value = √965 = 31.064 Volt.

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10. 

Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.

A. 42.53, 0.85 μA
B. 40.91, 0.58 μA
C. 40.91, 0.58 μA
D. 41.10, 0.39 μA

Answer: Option A

Explanation:

SICO = (1 + β). 76-420-1

1-sym-imp51.76-420-2= 42.53

ΔIC = (SICO).ΔICO

= 42.53 x 19.9 nA

= 0.85 μA.

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11. 

Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.

Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, 16 nA, at 50°C, 32 nA.

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12. 

A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is

A. 7 mA
B. 6.3 mA
C. 0.7 mA
D. 0

Answer: Option B

Explanation:

74-91-1

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13. 

The types of carriers in a semiconductor are

A. 1
B. 2
C. 3
D. 4

Answer: Option B

Explanation:

Holes and electrons.

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14. 

In a degenerate n type semiconductor material, the Fermi level,

A. is in valence band
B. is in conduction band
C. is at the centre in between valence and conduction bands
D. is very near valence band

Answer: Option B

Explanation:

This is due to high level of doping.

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15. 

Secondary emission is always decremental.

A. True
B. False

Answer: Option B

Explanation:

Sometimes it can be useful also.

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16. 

The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

49-301-1

A. AB
B. BC
C. CD
D. BD

Answer: Option B

Explanation:

Small signal amplifier operation is in constant current region of characteristics.

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