A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 . The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift th

1. 

A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .
[A]. 8.6 x 10 11/cm2, p-type
[B]. 8.6 x 10 11/cm2, n-type
[C]. 0.86 x 109/cm2, p-type
[D]. 1.02 x 10 12/cm2, n-type

Answer: Option A

Explanation:

VT(new) = VT(odd) + 4-796-57-1

4-796-57-2

4-796-57-3 = 6.903 x 10-8

4-796-57-4

4-796-57-5

fB = - 8.6 x 1011

The threshold voltage is always negative for p-channel and hence implant is of p-type.

 

 
Workspace Report
Leave a Comment

Electronics & Communication Engineering :: Electronics and Communication Engineering : More Exercises

Questions & Answers

Aptitude Chemical Engineering Civil Engineering Computer Science & Engineering Current Affairs Data Interpretation Electrical & Electronics Engineering Electronics & Communication Engineering General Knowledge Logical Reasoning Mechanical Engineering Non Verbal Reasoning Verbal Ability Verbal Reasoning

Interviews

HR Interview

Jobs

Sarkari Jobs

Results

Rojgar ResultSarkari Result

Admission

Admission 2023

Admit Card

Admit Card 2023

Answer Key

Answer Key 2023