Field-Effect Transistors - General Questions (2)

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Field-Effect Transistors - General Questions

High input resistance for a JFET is due to

A.	a metal oxide layer.
B.	a large input resistor to the device.
C.	an intrinsic layer.
D.	the gate-source junction being reverse-biased.

Answer: Option D

Explanation:

No answer description available for this question

10.

The resistance of a JFET biased in the ohmic region is controlled by

A.	VD.
B.	VGS.
C.	VS.
D.	VDS.

Answer: Option B

Explanation:

No answer description available for this question

11.

In a self-biased JFET circuit, if V_D = V_DD then I_D = ________.

A.	0
B.	cannot be determined from information above

Answer: Option A

Explanation:

No answer description available for this question

12.

What three areas are the drain characteristics of a JFET (V_GS = 0) divided into?

A.	ohmic, constant-current, breakdown
B.	pinch-off, constant-current, avalanche
C.	ohmic, constant-voltage, breakdown

Answer: Option A

Explanation:

No answer description available for this question

13.

Refer to figure show below. Calculate the value of V_D.

mcq7_1018_1 (3)

A.	20 V
B.	8 V
C.	6 V
D.	2 V

Answer: Option C

Explanation:

No answer description available for this question

14.

A dual-gated MOSFET is

A.	a depletion MOSFET.
B.	an enhancement MOSFET.
C.	a VMOSFET.
D.	either a depletion or an enhancement MOSFET.

Answer: Option D

Explanation:

No answer description available for this question.

15.

Identify the n-channel D-MOSFET.

mcq7_1007_1 (1)

A.	a
B.	b
C.	c
D.	d

Answer: Option A

Explanation:

o answer description available for this question

16.

All MOSFETs are subject to damage from electrostatic discharge (ESD).

A.	true
B.	false

Answer: Option A

Explanation:

No answer description available for this question

Field-Effect Transistors - General Questions (2)

Field-Effect Transistors - General Questions

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