FET Devices - General Questions (4)

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FET Devices - General Questions

25. 

It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device.
A. SiO
B. GaAs
C. SiO2
D. HCl

Answer: Option C

Explanation:

No answer description available for this question. 
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26. 

Which of the following controls the level of ID?
A. VGS
B. VDS
C. IG
D. VDG

Answer: Option A

Explanation:

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27. 

Referring to this transfer curve, determine ID at VGS = 2 V.

mcq06_01800
A. 0.444 mA
B. 1.333 mA
C. 0.111 mA
D. 4.444 mA

Answer: Option A

Explanation:

No answer description available for this question

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28. 

What is the ratio of ID / IDSS for VGS = 0.5 VP?
A. 0.25
B. 0.5
C. 1
D. 0

Answer: Option A

Explanation:

No answer description available for this question

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29. 

At which of the following condition(s) is the depletion region uniform?
A. No bias
B. VDS > 0 V
C. VDS = VP
D. None of the above

Answer: Option A

Explanation:

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30. 

Refer to this portion of a specification sheet. Determine the values of reverse-gate-source voltage and gate current if the FET was forced to accept it.

mcq06_02200
A. 25 Vdc, –200 nAdc
B. –25 Vdc, 10 mAdc
C. –6 Vdc, –1.0 nAdc
D. None of the above

Answer: Option B

Explanation:

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31. 

Which of the following applies to a safe MOSFET handling?
A. Always pick up the transistor by the casing.
B. Power should always be off when network changes are made.
C. Always touch ground before handling the device.
D. All of the above

Answer: Option D

Explanation:

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32. 

What is the range of an FET's input impedance?
A. 10 omega (1)1 to 1 k omega (1)1 
B. 1 k omega (1)1 to 10 k omega (1)1 
C. 50 k omega (1)1  to 100 k omega (1)1 
D. 1 M omega (1)1 to several hundred M omega (1)1 

Answer: Option D

Explanation:

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