FET Devices - General Questions (3)

Directions to Solve

FET Devices - General Questions

17. 

Refer to the following curves. Calculate ID at VGS = 1 V.

mcq06_02700

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A. 8.167 mA
B. 4.167 mA
C. 6.167 mA
D. 0.616 mA

Answer: Option B

Explanation:

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18. 

The region to the left of the pinch-off locus is referred to as the ________ region.
A. saturation
B. cutoff
C. ohmic
D. All of the above

Answer: Option C

Explanation:

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19. 

Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA.

mcq06_02600
A. 1.66 V
B. –1.66 V
C. 0.66 V
D. –0.66 V

Answer: Option A

Explanation:

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20. 

What is the purpose of adding two Zener diodes to the MOSFET in this figure?

mcq06_03200
A. To reduce the input impedance
B. To protect the MOSFET for both polarities
C. To increase the input impedance
D. None of the above

Answer: Option B

Explanation:

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21. 

The transfer curve is not defined by Shockley's equation for the ________.
A. JFET
B. depletion-type MOSFET
C. enhancement-type MOSFET
D. BJT

Answer: Option C

Explanation:

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22. 

The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is ________ the pinch-off value.
A. one-fourth
B. one-half
C. three-fourths
D. None of the above

Answer: Option B

Explanation:

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23. 

Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA.

mcq06_01700

 
A. 2.54 V
B. –2.54 V
C. –12 V
D. Undefined

Answer: Option B

Explanation:

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24. 

The BJT is a ________ device. The FET is a ________ device.
A. bipolar, bipolar
B. bipolar, unipolar
C. unipolar, bipolar
D. unipolar, unipolar

Answer: Option B

Explanation:

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